“We wouldn’t have experienced such a increase of electric vehicles without silicon carbide,�?said STMicroeletronics govt Edoardo Merli. One of these specific properties is that gate oxides in SiC-based power devices are typically characterized by a relatively large number of interface states, resulting in the so-referred to as threshold-voltage hysteresis. He https://www.facebook.com/permalink.php?story_fbid=pfbid02s9f9Lp41k8PnY49Uufb4L6amB3fXhAKpPofyA5sxzVAWk7La5N1bvWCUq3vvWduKl&id=61562415773754&__cft__[0]=AZUQSxu7Y-sROKbsovm5AM1_3WrGcZqDRm5hctvbEhuke--Oe8MEVyImDqQHytMUn9zrhrB-KA5WuxRhWTiQL1HP6k_6omo-OkEX_Les9Ok9rDH0UbvK_TXiYqTGLHbVxfKnnOs9gK1pSuwbS32TiFqxJqR0Jv7PDiBET_FylQExJAyG5IVll6Bj5KqMf6oc1w5PNrniYU1ZoSjXjJPw22qy&__tn__=%2CO%2CP-R